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Jing Kong

Institution
Massachusetts Institute of Technology

Projects

ToF-SIMS Characterization of Ni Films Used to Grow Few-Layer Graphene

Lead Institution
Massachusetts Institute of Technology
Principal Investigator
Jing Kong
Project type
Limited Scope
The growth of single- to few- layer graphene is implemented by ambient pressure CVD on thin Ni films (~500 nm). ToF-SIMS will be used to investigate the growth mechanisms of graphene over the Ni…

Growth mechanisms of graphene on thin Ni films

Lead Institution
Massachusetts Institute of Technology
Principal Investigator
Jing Kong
Project type
Exploratory Research
The growth of single- to few- layer graphene is implemented by ambient pressure CVD on thin Ni films (~500 nm). ToF-SIMS will be used to investigate the growth mechanisms of graphene over the Ni…

Growth Mechanism of Hexagonal Boron Nitride on Metal Catalyst Substrates

Lead Institution
Massachusetts Institute of Technology
Principal Investigator
Jing Kong
Project type
Limited Scope
The objective of this work is to better understand the impact and role of metal catalysts towards the synthesis of hexagonal boron nitride. High quality hexagonal boron nitride has recently been…