Energetic ion studies of key future technological materials
EMSL Project ID
11596
Abstract
This application covers collaborative projects on: (i) The study of atomic diffusion in key materials for technological materials, and (ii) Ion implantation into compound materialsThe program brings together the capabilities of the IGISOL and ion implantation facilities at JYFL with the expertise and facilities for Ion Beam Modification, Transmission Electron Microscopy (TEM), X-ray Diffraction (XRD) and Ion Beam Analysis (IBA) at EMSL/PNNL.
The specific problems to be studied (i) are the fundamental atomic diffusion of As, Ga and Si diffusion in Cobalt silicides and SiC. Though the use of short-lived ion beams from the IGISOL facility at JYFL the diffusion can be measured at concentrations as low as 10-4 at. ppm. At such low concentration the diffusion much more closely represents the atomic diffusion than for conventional SIMS and RBS measurements where the diffusion may be strongly influenced by trapping at nanoclusters. This diffusion data provides an important test for developing potentials for molecular dynamics simulation that are reliable for diffusion where the atomic configuration is locally far from the thermodynamic average conditions.
In (ii) a wide range of issues will be addressed such as the implantation of Co into Mn-doped ZnO which is of interest for spintronic applications. And the incorporation of hydrogen and deuterium in SiC and yttrium stabilized zirconia which is of interest for the "hydrogen economy". The goals are to determine the retention and atomic transport of implant atoms through the materials as well as the formation of nanocluster structures.
Project Details
Project type
Exploratory Research
Start Date
2005-02-01
End Date
2007-03-19
Status
Closed
Released Data Link
Team
Principal Investigator
Team Members
Related Publications
Joensson CT, IA Maximov, HJ Whitlow, V Shutthanandan, DE McCready, BW Arey, Y Zhang, and S Thevuthasan. 2005. "Synthesis and Characterization of Cobalt Silicide Films on Silicon." PNNL-SA-44675, Pacific Northwest National Laboratory, Richland, WA.
Whitlow HJ, Y Zhang, CM Wang, DE McCready, T Zhang, and Y Wu. 2006. "Formation of cobalt silicide from filter metal vacuum arc deposited films." Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms 247(2):271-278.