Characterization of oxide based diodes
EMSL Project ID
16718
Abstract
Recently the field of transparent optoelectronic devices has seen tremendous advances due in part to new materials developments, processing capabilities, and novel applications. Transparent thin film transistors and transparent diodes are necessary building blocks for the development of active transparent UV-detectors, UV-emitting diodes, and display applications. At Hewlett-Packard we are investigating amorphous oxide materials which have been found to have very good electrical and optical properties. We are currently focusing on the development of transparent diodes using zinc indium oxide as an n-type material and a copper-based oxide as a p-type material. The films are sputter deposited at ambient temperature and patterned using shadow masks to make the devices. Characterization performed internally at HP has indicated that the band-gaps for these materials are 3.3 and 2.8 eV, respectively. XRD results indicate that both films are amorphous. Electrical characterization of the diodes have given very good on/off ratios of >1000.The experiments that are planned at the EMSL are to determine the valence band maximum (VBM) and work-functions for these materials. The VBM values will allow us to determine the band alignment for the heterojunction and provide inputs for modeling of the electrical characteristics.
Project Details
Project type
Exploratory Research
Start Date
2005-11-01
End Date
2007-07-06
Status
Closed
Released Data Link
Team
Principal Investigator
Team Members