Measurement of band gap, band offset, and thickness for ultra-thin SiO2, SiON and high-k films on Si.
EMSL Project ID
16993
Abstract
Ultra-thin oxide, oxinitride or high-k thin films prepared on Si substrates need characterizations for the chemical or interface state and evaluation of thickness, band gap and band offset values for the future device applications. High-resolution x-ray photo electron spectroscopy (XPS) is the essential tool to measure all the above properties for the films deposited directly on Si substrates. The band offsets and band gap values are determined using valence band and O1s (N1s) energy loss spectra in XPS, respectively. The purpose of our study is to determine the above parameters at the SiO2/Si, SiON/Si or HfSiON/Si interfaces and to find the conduction barrier height which is essential for the low leakage current in the device.
Project Details
Project type
Exploratory Research
Start Date
2006-03-09
End Date
2007-03-22
Status
Closed
Released Data Link
Team
Principal Investigator