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METAL-INDUCED CRYSTALLIZATION VIA SPUTTERING DEPOSITION ON FLEXIBLE SUBSTRATES AND ITS APPLICATIONS


EMSL Project ID
19801

Abstract

We propose to continue investigation of metal-induced crystallization (MIC) via sputter deposition. Poly-Si films were successfully grown on 0.5μm thermal oxide on silicon wafers and characterized from the previous efforts. In this work, we will focus on device fabrication on both rigid and flexible substrates. Full testing of material properties and transistor performance will be conducted. Detailed modeling of the device and fabrication process will be performed in order to optimize transistor performance. Thorough analysis of the device materials, structure, and performance is expected to result in the demonstration of a significant improvement in device characteristics. We are requesting three 4-week periods to perform the research described.

Project Details

Project type
Large-Scale EMSL Research
Start Date
2006-08-20
End Date
2007-10-30
Status
Closed

Team

Principal Investigator

Scott Dunham
Institution
University of Washington

Team Members

Hsiu-wu Guo
Institution
University of Washington

Chen-luen Shih
Institution
University of Washington