Fundamental Studies of Implantation Defects in 4H-SiC
EMSL Project ID
2183
Abstract
The goal is to obtain a fundamental understanding of the accumulation and recovery of ion-implantation defects on both the Si and C sublattices in 4H-SiC. The 4H-SiC single-crystal samples will be provided by the user. Ion implantation with Aluminium and other ions will be carried out at temperatures from 150 K to 350 K. Isochronal annealing up to 870 K will be used to study damage recovery. Ion-beam analysis techniques will be used to following both damage accumulation and recovery. Deuterium ions (0.94 MeV) will be used to follow damage recovery both the Si and C sublattices using RBS/Channeling and nuclear reaction analysis (NRA) respectively. Helium RBS/Channeling will be used for other studies. The results of this work will be published in peer-reviewed journals.
Project Details
Project type
Exploratory Research
Start Date
2001-02-02
End Date
2003-03-04
Status
Closed
Released Data Link
Team
Principal Investigator