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SEM study of gold implanted gallium nitride


EMSL Project ID
2244

Abstract

Gallium nitride (GaN) is a wide bandgap semiconductor material and has a great potential for applications in optoelectronics and power electronics. Prior to the device fabrication, a fundamental understanding of implantation damage and its evolution is important. We have performed Au ion implantation in GaN and have analyzed the damage using H and He ion channling in EMSL. In the thermal annealing processes, H and He blisters/bubbles were formed and ruptured in the near-surface region. We observed similar behavior in hydrogen or helium implanted SiC and SrTiO3 and obtained interesting results by using Scanning Electron Microscopy (SEM). In this proposal, SEM is used to study the fundamental blistering processes in GaN, which may eventually result in a smart cut technology for the material. In addition, SEM may also be able to provide helpful information regarding the possible formation of Au clusters in GaN.

Project Details

Project type
Exploratory Research
Start Date
2001-05-08
End Date
2001-12-31
Status
Closed

Team

Principal Investigator

Weilin Jiang
Institution
Pacific Northwest National Laboratory

Team Members

William Weber
Institution
University of Tennessee