SEM study of gold implanted gallium nitride
EMSL Project ID
2244
Abstract
Gallium nitride (GaN) is a wide bandgap semiconductor material and has a great potential for applications in optoelectronics and power electronics. Prior to the device fabrication, a fundamental understanding of implantation damage and its evolution is important. We have performed Au ion implantation in GaN and have analyzed the damage using H and He ion channling in EMSL. In the thermal annealing processes, H and He blisters/bubbles were formed and ruptured in the near-surface region. We observed similar behavior in hydrogen or helium implanted SiC and SrTiO3 and obtained interesting results by using Scanning Electron Microscopy (SEM). In this proposal, SEM is used to study the fundamental blistering processes in GaN, which may eventually result in a smart cut technology for the material. In addition, SEM may also be able to provide helpful information regarding the possible formation of Au clusters in GaN.
Project Details
Project type
Exploratory Research
Start Date
2001-05-08
End Date
2001-12-31
Status
Closed
Released Data Link
Team
Principal Investigator
Team Members