Characterization of amorphous oxide transparent semiconductors
EMSL Project ID
25681
Abstract
Recently the field of transparent optoelectronic devices has seen tremendous advances due in part to new inorganic materials developments, processing capabilities, and novel applications. Transparent thin film transistors and transparent diodes are necessary building blocks for the development of active transparent UV-detectors, UV-emitting diodes, and display applications. At Hewlett-Packard we are investigating transparent amorphous oxide semiconductor (TAOS) materials which have been found to have very good electrical and optical properties. These materials have been found to be sensitive to processing, where small changes in oxygen partial pressure during deposition can influence whether the material is conductive or semiconductive. Typically it is presumed that oxygen vacancies lead to the increased conductivity, but other donor mechanisms such as cation interstitials and hydrogen atoms in the bulk of the film can be important as well. Furthermore, the chemistry on exposed surfaces can also strongly influence the conductivity of the films due to acceptor/donor states at the surface which can either deplete/accumulate charge through the entire thickness of the film. It is the goal of this work to better characterize the interfacial chemistry, bulk/surface diffusion, and related bulk and surface properties for these TAOS films.
Project Details
Project type
Large-Scale EMSL Research
Start Date
2007-06-18
End Date
2008-06-22
Status
Closed
Released Data Link
Team
Principal Investigator
Team Members