Expiremental Measurements of the Band Offsets of Epitaxial Silicon on LaAlO3 Single Crystals
EMSL Project ID
2640
Abstract
The objective of this work is to determine the band offsets of LaAlO3 on silicon. LaAlO3 is a candidate material to replace SiO2 as a high K gate dielectric in CMOS technology. It is predicted that the band offsets of the gate dielectric must be > 1 eV with respect to Si. The band offsets of LaAlO3 have been determined theoretically, but not experimentally measured. The approach will be to measure the band structure of LaAlO3 using XPS at PNNL. The test structure will be epitaxial silicon on LaAlO3 single crystals. I will need approximately 1 week on MBE I to complete the experiments.
Project Details
Project type
Exploratory Research
Start Date
2002-11-11
End Date
2005-11-11
Status
Closed
Released Data Link
Team
Principal Investigator
Team Members
Related Publications
Cicerrella E, JL Freeouf, LF Edge, DG Schlom, T heeg, J Schubert, and SA Chambers. 2005. "Optical properties of La-based high-K dielectric films." Journal of Vacuum Science and Technology A--Vacuum, Surfaces and Films 23(6):1676-1680.
Edge LF, RT Brewer, YJ Chabal, JR Williams, SA Chambers, C Hinkle, G Lucovsky, Y Yang, S Stemmer, M Copel, B Hollander, J Schubert, and DG Schlom. 2004. "Suppression of Subcutaneous Oxidation during the Deposition of Amorphous Lanthanum Aluminate on Silicon." Applied Physics Letters 84(23):4629-4631.
Edge LF, SA Chambers, E Cicerrella, JL Freeouf, B Hollander, J Schubert, and DG Schlom. 2004. "Measurement of the Band Offsets between Amorphous LaAlO? and Silicon." Applied Physics Letters 84(5):726-728.