Determination of enhanced ZnO nucleation and growth by modeling, simulation and MOCVD under UV irradiation
EMSL Project ID
30424
Abstract
ZnO is a wide-band-gap semiconductor with band gap energy, Eg, of 3.37 eV at room temperature. It possesses a large exciton binding energy of 60 meV. Considerable excitement has been associated with potential applications of this material system including high efficiency energy conversion such as solid state lighting and photovoltaic cells, UV optoelectronics and transparent field effect transistors. In spite considerable effort, serious problems remain in the controlled growth of high quality ZnO films, particularly those exhibiting p-type conduction behavior. In this work, we propose to study the effects of ultraviolet illumination on the growth mechanisms of ZnO with the aim of altering surface chemistry. Advanced computer modeling/simulation of the effects of UV illumination on surface species will be studied and the results applied to the growth of ZnO at the EML group at PNNL. In addition, post growth processing of ZnO films utilizing FIB will be used to investigate/capitalize on improvements observed in the growth of ZnO films.
Project Details
Project type
Large-Scale EMSL Research
Start Date
2008-09-16
End Date
2009-09-30
Status
Closed
Released Data Link
Team
Principal Investigator
Team Members