Characterization and method development for back-end of the line wafer processing concepts
EMSL Project ID
3158a
Abstract
Advanced concepts in back end of the line (BEOL) wafer processing are necessary to push semiconductor technology beyond the 90-nm node. Characterization of chips in this regime and for these concepts is an unsolved problem. We propose to develop and apply advanced charaterization methods in support of advanced semiconductor processing concepts.
Project Details
Project type
Exploratory Research
Start Date
2006-02-02
End Date
2007-07-06
Status
Closed
Released Data Link
Team
Principal Investigator
Team Members
Related Publications
Foraita S, JL Fulton, ZA Chase, A Vjunov, P Xu, E Baráth, DM Camaioni, C Zhao, and JA Lercher. 2014. "Impact of the Oxygen Defects and the Hydrogen Concentration on the Surface of Tetragonal and Monoclinic ZrO2 on the Reduction Rates of Stearic Acid on Ni/ZrO2." Chemistry – A European Journal. doi:10.1002/chem.201405312