Ion-beam-induced structural changes in compound semiconductors studied by advanced electron microscopy
EMSL Project ID
33206
Abstract
Radiation effects in solids are one of the important issues in the research fields ranging from microelectronics devices to nuclear fusion reactors. In particular, irradiation-induced amorphization has been extensively studied so far, because it is often accompanied with the significant changes of materials properties. Knowledge of amorphous structures is therefore of technological importance for understanding the amorphization mechanisms under radiation environments. Here we pay special attention to ion-beam-induced structural changes in compound semiconductors, such as gallium nitride, gallium arsenide, and gallium antimonide. The response of these materials under radiation environments is quite different: some of them exhibit far superior radiation damage tolerance (in particular amorphization resistance) and the degree of swelling is highly scattered. To assess radiation damage behavior in compound semiconductors, we perform high-energy ion irradiation into them using an implanter of Pacific Northwest National Laboratory, and characterize their amorphous structures using an advance transmission electron microscope installed in Osaka University.
Project Details
Project type
Exploratory Research
Start Date
2009-03-26
End Date
2010-03-28
Status
Closed
Released Data Link
Team
Principal Investigator
Related Publications
21st International Conference on the Application of Accelerators in Research and Industry (invited)
Ishimaru M, Y Zhang, and WJ Weber. 2009. "Ion-beam-induced chemical disorder in GaN." Journal of Applied Physics 106(5):053513, 1-4. doi:10.1063/1.3212555