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Spin Torque Effects in Multilayer Spin Valve with Perpendicular Magnetic Anisotropy


EMSL Project ID
34294

Abstract

The proposed research project is directed at the study of spin torque effects in multilayer spin valves with perpendicular magnetic anisotropy. Such devices have a potential for higher bit density on the chip in non-volatile magnetic random access memory (MRAM) and lower switching currents. Switching by high density current is due to the effect of spin torque transfer. The device will consist of two magnetic multilayers ([Co/Pt]n) with different coercive force, separated by a thin non-magnetic spacer (Cu) for the spin-valve operation. Pinning magnetization in one of the magnetic multilayers is achieved by adding an antiferromagnetic layer. The device will be deposited in a via etched by focused ion beams at EMSL which will enable us to precisely control the diameter of the pillar while simplifying the lithography stage.

Project Details

Project type
Exploratory Research
Start Date
2009-05-29
End Date
2010-05-30
Status
Closed

Team

Principal Investigator

Kannan Krishnan
Institution
University of Washington

Team Members

Laxmikant Saraf
Institution
Clemson University

Bruce Arey
Institution
Pacific Northwest National Laboratory