Growth mechanisms of graphene on thin Ni films
EMSL Project ID
34701
Abstract
The growth of single- to few- layer graphene is implemented by ambient pressure CVD on thin Ni films (~500 nm). ToF-SIMS will be used to investigate the growth mechanisms of graphene over the Ni films. We have carried preliminary studies of the depth profile and 2D mapphing of carbon concentration in the Ni films after CVD which have valuable insights of the growth mechanisms of graphene over the Ni films. Therefore, continuing these studies in more Ni films could enable us to develop a detailed model of graphene growth over our thin Ni films which will be useful in improving the quality of the graphene grown by this method.
Project Details
Project type
Exploratory Research
Start Date
2009-09-29
End Date
2010-09-30
Status
Closed
Released Data Link
Team
Principal Investigator