Extending Complementary-Metal-Oxide-Semiconductor Technology Into the Future
EMSL Project ID
40891
Abstract
With the continuous scaling of microelectronic device dimensions, the variability in MOSFET characteristics, primarily due to the discrete distribution of dopant atoms is a major challenge facing the semiconductor industry. We propose using the newly acquired laser-enhanced local-electrode atom-probe (LEAP) tomograph, focused-ion beam (FIB) microscope, and the TEMs at EMSL to perform 3-D composition profiling of complementary-metal-oxide-semiconductor (CMOS) devices materials and structures of high priority for extending CMOS technology into the future. The objective of this work is to develop an understanding of the impact of processing on dopant and impurity distribution in the key components of a transistor device. Particularity, we propose to study novel source/drain contacts, ultrashallow junctions, extensions, and high-K metal gate stack structures. This research seeks to characterize and understand the influence of interfaces, both grain boundaries and heterophase interfaces, on the distribution of dopants, and consequently on material properties and device performance, and is well aligned with EMSL's science theme "Science of Interfacial Phenomenon". Additionally, LEAP tomography analysis of the different diffusion phenomena and dopant distributions are invaluable for optimizing and improving the modeling tools presently used in the semiconductor industry. Previous work on the characterization of novel silicide alloys using LEAP tomography has been carried out at the Northwestern University Center for Atom-Probe Tomography.
Project Details
Project type
Exploratory Research
Start Date
2010-06-17
End Date
2011-06-19
Status
Closed
Released Data Link
Team
Principal Investigator
Team Members