Ion-beam-induced defect formation in heterostructured interfaces
EMSL Project ID
51611
Abstract
This project aims to expand our investigation of defects induced by ion-beam irradiation in oxide and semiconductor systems. We build on our prior existing EMSL proposals, which resulted in multiple high-impact publications and external proposals to DOE-BES. In particular, it is challenging to predict the defects that will form under different irradiation conditions in these materials, particularly at interfaces. We propose to characterize the evolution of crystal structure, chemistry, and composition using both volume-averaged and local probes. We will characterize crystallinity and its evolution after ion irradiation using X-ray diffraction (XRD) and cross-sectional focused ion beam (FIB) sample preparation in EMSL, followed by measurements of local structural changes using scanning transmission electron microscopy (STEM) in RPL / 3410 and atom probe tomography (APT) in EMSL. Based on our experiments, we will conduct density functional theory (DFT) simulations to explore defect formation and energetics. The end goal of this project is to generate new insight into the spatial evolution of defects formed during controlled irradiation of model interfaces.
Project Details
Start Date
2020-10-01
End Date
2021-09-30
Status
Closed
Released Data Link
Team
Principal Investigator
Team Members