Allen Chaparadza

Determination p-dopant concentration in wide band gap SnO2
Semiconductor, using RBS technique

Lead Institution

Portland State University

Principal Investigator

Allen Chaparadza

Project type

Exploratory Research

Tin Oxide has been widely used as an n-type material and very little progress has been made so far to fabricate it into a p-type material. We are interested in understanding whether it can be easily…

Determination Li concentration in wide band gap SnO2
Semiconductor, using RBS technique

Lead Institution

Portland State University

Principal Investigator

Allen Chaparadza

Project type

Exploratory Research

Tin Oxide has been widely used as an n-type material and very little progress has been made so far to fabricate it into a p-type material. We have recently reported that Li insertion into tin dioxide…

NMR Studies of Li-doped wide band SnO2 nanoparticles

Lead Institution

Portland State University

Principal Investigator

Allen Chaparadza

Project type

Limited Scope

The development of electrical and electronic devices with nanometric dimensions is a great challenge for technological applications. Knowledge of micro structural properties of nanostructureed doped…

EMSL Science Overview

Allen Chaparadza

Projects

Determination p-dopant concentration in wide band gap SnO2
Semiconductor, using RBS technique

Determination Li concentration in wide band gap SnO2
Semiconductor, using RBS technique

NMR Studies of Li-doped wide band SnO2 nanoparticles

Projects

Determination p-dopant concentration in wide band gap SnO2 Semiconductor, using RBS technique

Determination Li concentration in wide band gap SnO2 Semiconductor, using RBS technique

NMR Studies of Li-doped wide band SnO2 nanoparticles

Determination p-dopant concentration in wide band gap SnO2
Semiconductor, using RBS technique

Determination Li concentration in wide band gap SnO2
Semiconductor, using RBS technique