Determination p-dopant concentration in wide band gap SnO2
Semiconductor, using RBS technique
EMSL Project ID
15904
Abstract
Tin Oxide has been widely used as an n-type material and very little progress has been made so far to fabricate it into a p-type material. We are interested in understanding whether it can be easily doped with elements like Lithium into a p-type material. We have synthesized SnO2 samples at different doping levels, as a function of pH and calcination temperature and interested in knowing how much lithium is incorporated into the SnO2 lattice. A good method that can be used to quantitatively determine this is RBS.
Project Details
Project type
Exploratory Research
Start Date
2005-08-22
End Date
2007-07-06
Status
Closed
Released Data Link
Team
Principal Investigator
Team Members
Related Publications
Chaparadza A, and SB Rananavare. 2010. "Towards P-Type Conductivity in SnO2 Nanocrystals through Li Doping." Nanotechnology 21(3):035708. doi:10.1088/0957-4484/21/3/035708