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Tai-Chang Chen

Institution
University of Washington

Projects

Post Growth Analysis of GaN and InGaN Grown with MOCVD

Lead Institution
University of Washington
Principal Investigator
Tai-Chang Chen
Project type
Exploratory Research
InGaN alloy system is appropriate for light detection due to its direct bandgap and high absorption coefficient. The bandgap energies of wurtzite GaN and InGaN are 3.39 and 1.89 eV, respectively. …

Post Growth Analysis of GaN and InGaN Grown with MOCVD

Lead Institution
University of Washington
Principal Investigator
Tai-Chang Chen
Project type
Exploratory Research
InGaN alloy system is appropriate for light detection due to its direct bandgap and high absorption coefficient. The bandgap energies of wurtzite GaN and InGaN are 3.39 and 1.89 eV, respectively. …