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Post Growth Analysis of GaN and InGaN Grown with MOCVD


EMSL Project ID
1919a

Abstract

InGaN alloy system is appropriate for light detection due to its direct bandgap and high absorption coefficient. The bandgap energies of wurtzite GaN and InGaN are 3.39 and 1.89 eV, respectively. InGaN optical devices are active from UV well into red.
GaN and InGaN thin films (1-2 microns) have been grown using MOCVD. In addition to optical measurements, post-growth analysis needs to be performed for both film composition, film crystallinity, and surface morphology. AES can be used to give a composition throughout the depth of the film by alternating between ion milling and analysis. The crystallinity of the film can be analyzed using XRD. Both a thets-2theta and rocking curve analysis need to be performed to give crystalline properties of the film. The surface morphology of the film will need to be analyzed using SEM.

Project Details

Project type
Exploratory Research
Start Date
2003-04-30
End Date
2005-05-23
Status
Closed

Team

Principal Investigator

Tai-Chang Chen
Institution
University of Washington

Team Members

Eswaranand Venkatasubramanian
Institution
University of Washington

Kunakorn Poochinda
Institution
University of Washington