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Kunakorn Poochinda

Institution
University of Washington

Projects

Characterization of GaN/InGaN/GaN thin film structures

Lead Institution
University of Washington
Principal Investigator
Fumio Ohuchi
Project type
Exploratory Research
Under the seed funding recently obtained from Semiconductor Research Corporation (Research Triangle, NC), we are investigating nitride-based quantum well structures for the development of direct…

Post Growth Analysis of compositionally graded InGaN Grown with MOCVD

Lead Institution
University of Washington
Principal Investigator
Fumio Ohuchi
Project type
Large-Scale EMSL Research
Under the seed funding recently obtained from Semiconductor Research Corporation (Research Triangle, NC), we are investigating nitride-based quantum well structures for the development of direct…

Post Growth Analysis of GaN Grown with Low Temperature MOCVD

Lead Institution
Lawrence Berkeley National Laboratory
Principal Investigator
Michael Johnson
Project type
Exploratory Research
GaN thin films (1-2 microns) have been grown using MOCVD at low temperatures (415-460 C). During growth, disturbances in processing conditions have been purposely introduced to induce changes in…

Post Growth Analysis of GaN and InGaN Grown with MOCVD

Lead Institution
University of Washington
Principal Investigator
Tai-Chang Chen
Project type
Exploratory Research
InGaN alloy system is appropriate for light detection due to its direct bandgap and high absorption coefficient. The bandgap energies of wurtzite GaN and InGaN are 3.39 and 1.89 eV, respectively. …

Post Growth Analysis of GaN and InGaN Grown with MOCVD

Lead Institution
University of Washington
Principal Investigator
Tai-Chang Chen
Project type
Exploratory Research
InGaN alloy system is appropriate for light detection due to its direct bandgap and high absorption coefficient. The bandgap energies of wurtzite GaN and InGaN are 3.39 and 1.89 eV, respectively. …