Post Growth Analysis of GaN Grown with Low Temperature MOCVD
EMSL Project ID
1919
Abstract
GaN thin films (1-2 microns) have been grown using MOCVD at low temperatures (415-460 C). During growth, disturbances in processing conditions have been purposely introduced to induce changes in film properties such as stoichiometry and the degradation of film structure. These disturbances consisted of changes in dilution flow rate and changes in MO concentration by adjusting the bath temperature. Post-growth analysis needs to be performed for both film composition, film crystallinity, and surface morphology. XPS can be used to give a composition throughout the depth of the film by alternating between ion milling and analysis. This will ultimately give changes in composition throughout the film caused by these process disturbances. The crystallinity of the film can be analyzed using XRD. Both a thets-2theta and rocking curve analysis need to be performed to give crystalline properties of the film. The surface morphology of the film will need to be analyzed using AFM and SEM. This will give us complete topography which is important in giving information about growth mechanism.
Project Details
Project type
Exploratory Research
Start Date
2000-02-22
End Date
2001-04-01
Status
Closed
Released Data Link
Team
Principal Investigator
Team Members
Related Publications
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19199_ASM2007
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