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Michael Johnson

Institution
Lawrence Berkeley National Laboratory

Projects

Post Growth Analysis of GaN Grown with Low Temperature MOCVD

Lead Institution
Lawrence Berkeley National Laboratory
Principal Investigator
Michael Johnson
Project type
Exploratory Research
GaN thin films (1-2 microns) have been grown using MOCVD at low temperatures (415-460 C). During growth, disturbances in processing conditions have been purposely introduced to induce changes in…

Investigation of strain in InGaN MQW structures

Lead Institution
Lawrence Berkeley National Laboratory
Principal Investigator
Michael Johnson
Project type
Exploratory Research
InGaN/GaN MQW structures have been grown using a commercial MOCVD reactor. These structures are commonly used for high brightness LEDs and are a necessary component for developing practical white…

Investigation of structural properties of oxide and nitride nanowires

Lead Institution
Lawrence Berkeley National Laboratory
Principal Investigator
Michael Johnson
Project type
Exploratory Research
Group-III oxide and nitride (In2O3, Ga2O3, SnO2, ITO, GaN, AlN, InN) nanostructures are expected to be important components for future nanoelectronic and photonic devices. Controlled growth and…