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Investigation of structural properties of oxide and nitride nanowires


EMSL Project ID
14101

Abstract

Group-III oxide and nitride (In2O3, Ga2O3, SnO2, ITO, GaN, AlN, InN) nanostructures are expected to be important components for future nanoelectronic and photonic devices. Controlled growth and characterization of some binary nanowire structures such as In2O3 and GaN nanowires have already been realized. Unfortunately, not much is known about the growth and characterization of some of the other materials such as SnO2 and InN or more advanced structures such as the ternary materials (ITO, InGaN, etc.)which show promising properties for some advanced devices. Novel materials on the nanoscale have been synthesized using CVD and MOCVD growth strategies. Structural and compositional characterization is crucial to understand fundamental physics and the effects of dimensionality of these nanosize materials. Additionally, an understanding of the characterization analysis will help in understanding growth parameter effects for synthesizing advanced structures.

Project Details

Project type
Exploratory Research
Start Date
2005-03-22
End Date
2005-12-07
Status
Closed

Team

Principal Investigator

Michael Johnson
Institution
Lawrence Berkeley National Laboratory