Investigation of strain in InGaN MQW structures
EMSL Project ID
4795
Abstract
InGaN/GaN MQW structures have been grown using a commercial MOCVD reactor. These structures are commonly used for high brightness LEDs and are a necessary component for developing practical white LEDs devices. We have shown for a seven period InGaN/GaN (25A/150A) MQW structure grown on different thickness GaN template layers that the electroluminescence emission is red shifted by 0.15 eV for the thicker template. This could be due to reduced/increased strain due to the increase/decrease in template thickness. A strain analysis using High Resolution X-Ray Diffraction (HRXRD) could help in determining strain differences and possibly some composition determination in these structures and related to the thickness of the template layer.
Project Details
Project type
Exploratory Research
Start Date
2003-09-11
End Date
2005-12-07
Status
Closed
Released Data Link
Team
Principal Investigator
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