Photoreflectivity in Ge/Si thin films
EMSL Project ID
11493
Abstract
We are measuring the photoreflectivity at 750-800 nm in specially prepared Ge thin films deposited on Si/SiN substrates. The measurements will allow us to estimate the actual free carrier lifetime in our thin film samples used for thermal phase change EXAFS-femtosecond laser time resolved measurements at the Advanced Photon Source.
Project Details
Project type
Exploratory Research
Start Date
2004-10-13
End Date
2005-10-21
Status
Closed
Released Data Link
Team
Principal Investigator
Team Members
Related Publications
Stern E, D Brewe, KM Beck, SM Heald, and Y Feng. 2005. "SubNanosecondTime Resolved XAFS of Laser Excited Thin Ge Films." Physica Scripta T115:1044.