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Interface Chemistry and electronics of ZnSe and ZnS upon Culn2Se3


EMSL Project ID
1883

Abstract

We plan to examine the interface chemistry and electronics of ZnSe and ZnS upon Culn2Se3. Copper indium selenide films have become one of the most promising materials for low cost, high efficeincy (14%) solar cells. However, the current N type partner, CdS, has drawbacks because of the toxicity of Cd. The Zn compounds have shown promise as replacements for the N type CdS layer. We propose depositing ZnSe and ZnS upon Culn2Se3 using MOCVD and investigating the electronic properties of the ZnSe/Culn2Se3 interface using UPS, XPS and SIMS.

Project Details

Project type
Exploratory Research
Start Date
1999-02-26
End Date
2002-03-31
Status
Closed

Team

Principal Investigator

Peter Eschbach
Institution
Washington State University