Development of Procedures for Obtaining Clean, Defect-Free Ge Surfaces
EMSL Project ID
1928
Abstract
It is difficult to obtain clean, defect-free Ge surfaces using either standard UHV techniques such as sputter/annealing or wet chemical methods. The principal difficulty is thought to be removing C which forms clusters on the surface when the surface is heated. In situ oxygen plasma treatment is a promising technique for removing traces of C. The goal of this project is to determine if plasma treatment can be used as a simple, fast technique to remove residual C from Ge surfaces, thus allowing atomically smooth surfaces to be created. The project requires an UHV system equipped with surface analysis equipment such as XPS, LEED, and STM; in addition to a plasma source. Such a system is available at EMSL.
Project Details
Project type
Exploratory Research
Start Date
2000-03-13
End Date
2000-05-23
Status
Closed
Released Data Link
Team
Principal Investigator
Team Members