Fabrication and Characterization of
High-Performance Transparent Transistor
EMSL Project ID
21609b
Abstract
The primary objective of this proposal is to develop a high-performance transparent thin film transistor (TTFT) at sub-micron scale with single-crystalline channel on both rigid and flexible substrates. This type of transistor can be integrated into invisible and functional circuits for a variety of applications, such as transparent radio frequency identification (RFID) and transparent active matrix for canopy window displays. The proposed activities are expected to bring about a broad and systematic exploration into the brand new territory of transparent electronics, answer the existing challenges, and substantially advance the technological base of this area. The success of the proposed project can open the way for more invisible and practical electronic devices and systems.
Project Details
Project type
Large-Scale EMSL Research
Start Date
2008-08-22
End Date
2009-09-30
Status
Closed
Released Data Link
Team
Principal Investigator