High pressure VLS synthesis of silicon nanowires
EMSL Project ID
22591a
Abstract
Silicon nanowires synthesized via supercritical cyclohexane solvent at a high temperature of 450C and pressures of 200bar will be studied. Doping of the silicon nanowires with p- and n- dopant during their synthesis has yet to be examined. These silicon nanowires will eventually be integrated into devices for microelectronic applications. Thus, the knowledge of the optoelectronic properties and structural characterization of these silicon nanowires is crucial. Due to our limitation in nanometrological equippment availiable to us, we are limited as to how far we can understand or progress with these materials. EMSL has a larger resources for the above studies. By using the facilities we can better understand the silicon nanowires.
Project Details
Project type
Exploratory Research
Start Date
2008-04-04
End Date
2009-04-05
Status
Closed
Released Data Link
Team
Principal Investigator
Team Members