Analysis of Silicon Nitride Thin Films
EMSL Project ID
2309
Abstract
We would like to determine the atomic composition as a function of depth for thin films of silicon nitride deposited on silicon wafers. We are also interested in the cyrstallinity of the material as well. We propose to use SEM-X-ray, SIMS, XPS, RBS, Raman microprobe, and FTIR microprobe to identify and quantify the atomic species. The SEM-Xray can be used to look at a cross section of the wafer and identify the layers. Raman and FTIR microprobe could look for NH and SiH moeities. The XPS and SIMS would hopefully give information about the amount of hydrogen contained in the film along with the RBS if you have it.
Project Details
Project type
Exploratory Research
Start Date
2001-08-30
End Date
2002-03-31
Status
Closed
Released Data Link
Team
Principal Investigator
Related Publications
Murdachaew G, M Valiev, SM Kathmann, and XB Wang. 2012. "Study of Ion Specific Interactions of Alkali Cations with Dicarboxylate Dianions." Journal of Physical Chemistry A 116(9):2055-2061. doi: 10.1021/jp3012848
Shokri A, JC Schmidt, XB Wang, and SR Kass. 2012. "Hydrogen Bonded Arrays: The Power of Multiple Hydrogen Bonds." Journal of the American Chemical Society 134(4):2094-2099. doi:10.1021/ja2081907