Development of Tunable THz Sources using Focused Ion Beam (FIB)-Based Lithography
EMSL Project ID
26710
Abstract
The terahertz (THz) regime (0.1-10 THz) is rich with emerging possibilities in sensing, imaging and communications, with unique applications to screening for weapons, explosives and biohazards, imaging of concealed objects, water content and skin. This work will use the latest high-resolution FIB-SEM duel capability microscope that is built by FEI for EMSL. Major technical specifications of this capability include: 1) electron probe size ~ 1nm at 20 nA current, 2) chemical composition analysis - STEM detector, EDS detector, EBSD detector, EDX, in-situ sample charge neutralizer, 3) IR-CCD in-situ viewing, 4) samples up to 150 mm X 150 mm, sample can be tilted up 60 deg. Rotation with full 360 degrees, 5) nanolithography - either by Ga beam or by electron beam at the same spot (features as small as 10-50 nm), 6) digital Imaging with state-of-the-art "Helios" detector, 7) Ga beam cutting precision ~ 2 nm. Beam diameter ~ 7 nm, 8) OmniProbe for sample manipulation, 9) cutting/lifting desired structures of few microns size and placing them at desired locations, and 10) gas injection - up to four gases can be used while performing the operation. Unique photonic 2D/3D structures (gratings and photonic bandgap) will be fabricated at EMSL. The fabricated structures will be imaged using using SEM and TEM and electrical properties properties within and across the structures will be measured.
Project Details
Project type
Exploratory Research
Start Date
2007-10-01
End Date
2008-10-05
Status
Closed
Released Data Link
Team
Principal Investigator
Team Members