Development of Tunable Highly Efficient THz Sources using Focused Ion Beam (FIB)-Based Lithography
EMSL Project ID
30498
Abstract
The present proposal addresses this specific problem of availability of narrow line width cw source by designing, creating, and testing novel structures on semiconductor material surfaces for enhanced THz generation. Our approach consists of increasing interaction lengths with collinear interaction of THz and optical waves by microstructuring a semiconductor surface using an advanced processing (e.g., focused ion beam (FIB)) tool to control and tune the THz generation. This research will potentially lead to breakthroughs in fundamental semiconductor surface/interface science that will help advance the understanding of several physical/chemical/biological processes in THz regime and also develop more advanced THz spectroscopy capability in the future.
Project Details
Project type
Large-Scale EMSL Research
Start Date
2008-08-01
End Date
2009-09-30
Status
Closed
Released Data Link
Team
Principal Investigator
Team Members