Variable temperature XRD studies of Ge/SiO2/Si system
EMSL Project ID
4993
Abstract
This user proposal focuses on using the variable temperature X-ray diffraction capability in EMSL to investigate temperature dependent lattice parameters of a semiconductor system. Specifically, we will investigate the correlation between the lattice constants of Ge and Si in Ge/SiO2/Si system.
Project Details
Project type
Exploratory Research
Start Date
2003-09-28
End Date
2004-09-30
Status
Closed
Released Data Link
Team
Principal Investigator