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Variable temperature XRD studies of Ge/SiO2/Si system


EMSL Project ID
4993

Abstract

This user proposal focuses on using the variable temperature X-ray diffraction capability in EMSL to investigate temperature dependent lattice parameters of a semiconductor system. Specifically, we will investigate the correlation between the lattice constants of Ge and Si in Ge/SiO2/Si system.

Project Details

Project type
Exploratory Research
Start Date
2003-09-28
End Date
2004-09-30
Status
Closed

Team

Principal Investigator

Yong Liang
Institution
Motorola