Ion-beam-induced defect formation in oxide thin films
EMSL Project ID
60634
Abstract
This project aims to study ion-beam irradiation-induced defects in oxide and semiconductor systems. It is challenging to predict the defects that will form under different irradiation conditions in these materials, particularly at interfaces. We propose to characterize the evolution of crystal structure, chemistry, and composition using both volume-averaged and local probes. We will characterize crystallinity and its evolution after ion irradiation using cross-sectional focused ion beam (FIB) sample preparation in EMSL, followed by measurements of local structural changes using scanning transmission electron microscopy (STEM) in 3410 and RPL. Based on our experiments, we will conduct density functional theory (DFT) simulations to explore defect formation and energetics.
Project Details
Start Date
2022-10-30
End Date
2023-10-01
Status
Closed
Released Data Link
Team
Principal Investigator
Team Members