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Stability of H species in various dielectric films used in advanced microelectronic fabrication


EMSL Project ID
10793

Abstract

High concentration of H is found to present in various CVD dielectric films used in the interconnect part of microelectronic fabrication processes, which may be present as Si-H, N-H, O-H and C-H bonding in the dielectric film. The possibility of H release during each of the fabrication process is of great interest to the study of device reliability, especially NBTI (Negative Bias Temperature Instability) which the migration of H species into the gate dielectric is thought to be one of the causes for shift in device threshold voltage. In this study, RBS NRA and ERDA will be used to measure dielectric film composition change after 30 minute of 400 C anneal in N2 ambient.

Project Details

Project type
Exploratory Research
Start Date
2004-09-24
End Date
2006-04-10
Status
Closed

Team

Principal Investigator

Yuji Kuan
Institution
Texas Instruments Incorporated