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Investigation of oxygen diffusion in single crystal STO films grown on Si


EMSL Project ID
1091a

Abstract

Single crystal STO films that were grown on Si will be used in this study. We will use RBS/channeling, nuclear reaction analysis, high resolution TEM and XRD to charcaterize the samples.

Project Details

Project type
Exploratory Research
Start Date
2003-02-07
End Date
2006-02-12
Status
Closed

Team

Principal Investigator

Zhiyi Yu
Institution
Freescale Semiconductor Inc.