Preparation of Ultra Low Dielectric Constant Silica Films
EMSL Project ID
1808
Abstract
Objective is to develop ultra low dielectric constant silica films for microelectronic device applications. Optimization of dielectric, chemical and mechanical properties will involve nanostructure design and characterization. Specimen prepartion will involve electrode deposition using sputtering units. Films will be characterized by scanning electron microscopy, x-ray photoelectron spectroscopy and x-ray diffraction.
Project Details
Project type
Exploratory Research
Start Date
2000-01-24
End Date
2002-03-31
Status
Closed
Released Data Link
Team
Principal Investigator
Team Members