Spin Electronic Phenomena in Magnetically Doped Perovskites and Complex Oxide Interfaces
EMSL Project ID
19856
Abstract
Semiconductor spintronics has the potential to create entirely new paradigms for analog and digital electronics which may have a significant impact on energy consumption and efficiency. However, novel materials which harness the spin degree of freedom for transport must first be discovered and understood. To this end, we propose to investigate perovskite titanates doped with transition metals with unpaired d electrons, as well as complex oxide interfaces composed of these materials. We will use molecular beam epitaxy and pulsed laser deposition to fabricate MxSrTi1-xO3 and MxSrTi1-xO3/ LaTiO3 (M = Co and Cr) heterointerfaces and superlattices. After growth, the materials will be characterized by XPS, XRD, TEM, RBS, AFM, VSM and Hall effect measurements in the EMSL, as well as XANES and EXAFS at the Advanced Photon Source (APS) at Argonne National Laboratory. The detailed material properties will be compared to magnetic and magneto-electronic properties in order to elucidate structure-function relationships.
Project Details
Project type
Large-Scale EMSL Research
Start Date
2006-07-21
End Date
2009-09-30
Status
Closed
Released Data Link
Team
Principal Investigator
Team Members