A combinatorial sputtering approach to magnetic properties modification of FeCoB
EMSL Project ID
11101
Abstract
Recent improvements in magnetic devices using amorphous soft magnetic FeCoB have shown the highest tunneling magnetoresistance (TMR) to date with a resistivity change of 70.4%. Further investigation into the FeCoB system by combinatorial sputtering is proposed to optimize the composition to obtain a higher TMR and understand the effects of compositional variation in the magnetic tunnel junction (MTJ) devices. The combinatorial sputter deposition approach will allow multiple film compositions deposited under the same conditions at the same time to be characterized and compared. Changes in magnetic properties such as coercivity and remnant magnetization will be related to composition to find the optimal composition for detailed investigation and device production. A deeper mechanistic understanding of the role of boron in this system, its contribution to the spin polarization, and how boron interacts with other layers and interfaces will enable higher sensitivity MTJ devices. These new devices will find uses in the medical, military, and data storage industries.Project Details
Project type
Exploratory Research
Start Date
2004-10-01
End Date
2007-01-08
Status
Closed
Released Data Link
Team
Principal Investigator