Design and Synthesis of Tailored Band-Gap SiGe(C) Detectors
EMSL Project ID
16100
Abstract
This project will discover new materials based on Si-Ge-C for use as efficient, high resolution, large-area radiation detectors. Si-Ge-C alloys have been developed as active semiconductor devices because the band-gap can be tailored, and, in some cases, a direct gap material can be produced. These materials can also be layered in multi-quantum well structures (MQWs) to improve carrier transport. This project will use a small-scale combinatorial research approach coupled with direct materials characterization and property measurement using nuclear microprobe techniques and calibrated sources. Materials will be synthesized using either physical vapor deposition or molecular beam epitaxy techniques and characterized using state-of-the-art techniques such as electron/ion beam induced current and transient deep level spectroscopy so that detector-relevant physical properties, such as the Fano factor, carrier generation and transport, etc., are determined in situ. Computational modeling to determine the proper layering and epitaxial relationships will be undertaken as part of this project to insure that the desired physical properties can be attained.
Project Details
Project type
Exploratory Research
Start Date
2005-07-18
End Date
2006-07-23
Status
Closed
Released Data Link
Team
Principal Investigator
Related Publications
Nuclear Instruments and Methods in Physics Research B 261 (2007) 723–726