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Controlling Field Emission from HV Structures


EMSL Project ID
16706

Abstract

High-purity, hydrogen-free silicon oxynitride films were successfully created using two techniques, plasma immersion ion implantation/deposition (PIII/D) and reactive sputtering. Our previous work has shown that coating 6” polished 304 stainless steel electrodes with silicon oxynitride, created by PIII/D, dramatically reduces field emission from 27 µA of at 15 MV/m to 160 pA at 30 MV/m. We have recently developed a new procedure to deposit silicon oxynitride without ion implantation using a low temperature (<200°C) reactive sputtering process. Both procedures use a 750 W Rf inductively-coupled nitrogen plasma that sputters silicon dioxide from a quartz dielectric window. The purpose of this study was to determine and compare the composition, especially the hydrogen concentration, of the silicon oxynitride coatings created using the reactive sputtering and PIII/D procedures.

Project Details

Project type
Exploratory Research
Start Date
2005-10-17
End Date
2007-01-19
Status
Closed

Team

Principal Investigator

Brian Holloway
Institution
College of William and Mary