Growth and Characterization of Fe doped TiO2 Films
EMSL Project ID
2512
Abstract
The ability to efficiently inject spins into multi-layer semiconductor device structures creates new and exciting possibilities for utilizing spin-polarized transport in computing and signal processing. Although some of the recent developments in conventional semiconductors indicate that the spins can be injected with relatively high efficiency, a major drawback of conventional semiconductors doped with magnetic transition metal ions is their low Curie temperatures, which are well below room temperature. Followed by the recent report related to the findings of higher Curie temperatures in Co-doped anatase TiO2 material, Scott Chamber's group at PNNL initiated extensive investigations of Co doping in anatase TiO2 materials. I started the growth and charcaterization of Fe doped rutile TiO2 materials for the same purpose last year with Theva Thevuthasan and Scott Chambers. The doped cations show various islanding and phase segregation in the material and characterization of these features are vital to the development of these materials in the area of spintronics. As such, in collaboration with Theva and Scott I propose to continue to perform systematic growth and characterization studies to develop a scientific understanding about the electronic and structural properties of Fe-doped Tio2 material as a function of various growth and processing parameters.
Project Details
Project type
Exploratory Research
Start Date
2002-07-05
End Date
2004-08-18
Status
Closed
Released Data Link
Team
Principal Investigator