High-k oxides and their mixed oxide systems
EMSL Project ID
30397
Abstract
The miniaturization of silicon (Si) electronic devices is forcing silicon oxide (SiO2), the conventional gate dielectric, to face its size-limits where its leakage current and reliability are of serious concern. SiO2 as a gate dielectric is, therefore, a key bottleneck in device downscaling. Zirconia (ZrO2) and hafnia (HfO2), the high dielectric constant (k) materials, have been considered as alternative gate dielectrics. However, formation of disordered high-k/Si interfaces, which degrades the performance, restrains the integration of ZrO2 and HfO2 into Si-nanotechnology. Further advancement in Si-nanotechnology, therefore, demands the atomically flat and abrupt interfaces for high-k oxides on Si. In this context, the project proposes to work on high-k oxides and their mixed oxide systems with a challenging goal of fabricating films with controlled surface/interface microstructure, properties and thermodynamic stability on Si for integration into nanoelectronics. The technical approach is based on: (1) plasma assisted surface/interface engineering and (2) surface nitridation of to enhance the structural order, stability and performance of high-k dielectrics. The project will make use of ion-beam analytical capabilities existing at the Pacific Northwest National Laboratory (PNNL) to understand the interfacial chemical reactions and chemistry of the compounds thus formed. The results will provide a detailed understanding of the factors driving disorder at the nanoscale for a better control over the microstructure, stability and properties of high-k oxide films, which will have tremendous impact on the electronics industries.
Project Details
Project type
Large-Scale EMSL Research
Start Date
2008-08-21
End Date
2009-08-23
Status
Closed
Released Data Link
Team
Principal Investigator