Electron valence characteristics of rare-earth ions in wide bandgap semiconductor nanowires
EMSL Project ID
32296
Abstract
The proposed research aims to probe and understand electron valence characteristics of rare-earth ions embedded in wide bandgap semiconductor nanowires, specifically zinc oxide (ZnO) and gallium nitride (GaN) nanowires, using X-ray photoelectron spectroscopy (XPS) techniques. As the electron valence state of rare-earth ions play a critical role in determining optical and magnetic properties of these ions, this project will contribute significantly to the on-going efforts by the PI to achieve a fundamental understanding of optical and magnetic properties of rare-earth doped ZnO and GaN nanowires and how these properties can be controlled by the material dimension, surface conditions, electronic doping, and external electric fields. For the proposed study, in this general user proposal (open call), the access to the Physical Electronics Instruments Quantum 2000 X-ray photoelectron spectrometer at the Environmental Molecular Sciences Laboratory (EMSL), with one two-day slots of the XPS time for every month, is requested. The high energy resolution capabilities of this facility are ideal for proposed studies to resolve photoelectron peaks from rare-earth ions with different electron valence states. The information obtained by XPS studies will provide the basis for understanding the optical and magnetic properties of rare-earth doped ZnO and GaN nanowires. With semiconductor nanowires emerging as one of the most powerful and versatile building blocks for future devices, this proposed research will contribute significantly to the realization of ultra-high-density and low energy-loss integrated electronic and photonic technologies as well as highly sensitive biological/chemical sensing applications.
Project Details
Project type
Exploratory Research
Start Date
2008-12-01
End Date
2009-12-06
Status
Closed
Released Data Link
Team
Principal Investigator