Ferromagnetism in MgO by Nitrogen Doping
EMSL Project ID
33690
Abstract
The new group, dilute ferromagnetic oxide and nitride, provides a promising technology potential to combine the magnetic and electronic properties. For the viewpoint of practical spintronics applications, interest in developing ferromagnetism with high Curie temperature (Tc) have triggered intensive studies in various oxides usually by doping transition metals (TMs) or rare earth metals (REs). A number of studies of room-temperature ferromagnetism in wide band gap semiconductors, such as Co-doped ZnO [1] and Co-doped TiO2 [2], have been repeated. However, the origin of ferromagnetism still remains controversial since the formation of second phase or clusters can not be rule out. On the other hand, it is quite remarkable that the prediction of ferromagnetism with Tc¬ higher than 400K was realized in the system of Cr-doped TiO¬2 [3,4]. Cr was found in the substitution for Ti, which introduces an occupied doper level in the band gap, leading to a dilute ferromagnetic semiconductor (DMS) with high Tc. Efforts to expend the choice of TMs or REs to other elements into III-Vs or II-VI semiconductors, therefore, are essential in finding ferromagnetic semiconductor with Tc¬ exceeding room temperature.
Project Details
Project type
Limited Scope
Start Date
2009-02-25
End Date
2009-04-27
Status
Closed
Released Data Link
Team
Principal Investigator
Team Members