Impurities Concentration Measurements in Silicon-doped Icosahedral Boron Arsenide (B12As2) Thin Films by Secondary Ion Mass Spectrometry
EMSL Project ID
41790
Abstract
The impurities present in Si-doped B12As2 thin films, produced by chemical vapor deposition with various Si concentrations in the feed, as well as one unintentional doped film, will be analyzed by secondary ion mass spectrometry. The primary purpose of this study is to determine how the Si concentration in the gas feed affects its incorporation in the solid thin film. With this information, B12As2 film with controlled silicon concentrations and thus controlled hole concentrations and mobilities will be produced. Ultimately, single or multilayer of B12As2 films with controlled electrical properties will be made into devices for neutron detection and nuclear batteries.
Project Details
Project type
Limited Scope
Start Date
2010-09-01
End Date
2010-11-01
Status
Closed
Released Data Link
Team
Principal Investigator
Team Members