Interfacial Properties of Ion-Irradiated SiC/C and SiC/Si Composites
EMSL Project ID
42307
Abstract
Disordering behavior of silicon carbide (SiC) ceramics under irradiation has attracted extensive studies due to its great potential for applications in nuclear industry. SiC has been considered as a structural material for fusion reactors and a cladding material for next-generation fission reactors. While disordering behavior in single crystal SiC has been extensively investigated and a greatly improved understanding has been achieved, recent studies of nanocrystalline SiC have indicated that interfaces between amorphous SiC and crystalline SiC play an important role in the amorphization process during ion irradiation. In composite materials, SiC grains are often embedded in either carbon-rich or silicon-rich media. The behavior of the heterogeneous interfaces of SiC under irradiation has never been investigated to date. It is still unclear how such interfaces dictate the disordering and defect recovery processes. This proposed work is to study the behavior of SiC/C and SiC/Si interfaces and defect properties of the material and to develop a fundamental understanding of the interfacial roles in the phase transformation processes. The work will have a significant impact on the development of future clean energy systems and security devices, including fuel cell technologies, nuclear energy systems, and advanced radiation detectors.
Project Details
Project type
Exploratory Research
Start Date
2010-12-01
End Date
2011-12-04
Status
Closed
Released Data Link
Team
Principal Investigator
Team Members