Characterization of Surface, Interfacial, and Bulk Phenomena for Next Generation Electronic Systems
EMSL Project ID
46399
Abstract
This project aims to improve the fundamental understanding of materials, chemistries, and interfacial phenomena for novel electronic devices and systems. Our initial efforts focus on the synthesis, characterization, and implementation of multi-functional oxide-based films for memristor device applications. Oxide-based materials have a high potential for environmentally benign synthesis, as well as having unique electronic and structural transformations that allow memristive switching between high and low resistance states. This proposal allows us to leverage the unique capabilities and interests of both EMSL and OSU researchers in the Science of Interfacial Phenomena theme. We will implement model systems to elucidate detailed atomistic mechanisms of defect migration and switching mechanisms for memristor devices using in-situ techniques available at the EMSL. Future studies will also investigate oxide-based films and other materials for thin film transistor, photovoltaic, and energy storage applications.
Project Details
Project type
Exploratory Research
Start Date
2011-11-07
End Date
2012-11-11
Status
Closed
Released Data Link
Team
Principal Investigator
Team Members
Related Publications
Flynn BT, RP Oleksak, S Thevuthasan, and GS Herman. 2018. "Interfacial Chemistry-Induced Modulation of Schottky Barrier Heights: In Situ Measurements of the Pt-Amorphous Indium Gallium Zinc Oxide Interface Using X-ray Photoelectron Spectroscopy." ACS Applied Materials & Interfaces 10(4):4333-4340. doi:10.1021/acsami.7b18674