Profiling Dopant Distributions in Ion Implanted Porous Group IV Materials
EMSL Project ID
48234
Abstract
Pure and doped porous group IV materials are under active investigation for a range of contemporary applications including thermoelectric, photovoltaic, water purification and nanomedicine. Controlling photothermal heating of silicon nanowires via ion-implantation is an appealing route towards a low-cost, highly scalable alternative to expensive noble-metal nanocrystals that can be used in these applications. Furthermore, engineering specific point defects in graphene aerogel has the potential to enhance electrical and ion transport within the three-dimensions of graphene network. One objective of the proposed research is to obtain three-dimensional atomic mapping of ion dopant distributions in silicon nanowires that have been synthesized via the metal-assisted chemical etching (MACE) method and to test the performance of various dopants for enhancing photothermal heating in semiconductor nanomaterials. The ability to quantitatively map phosphorous and gold dopant distributions will allow us to elucidate the mechanisms of photothermal heating in silicon nanowires, as well as open up a potentially new means of achieving reactive singlet-oxygen generation through a triplet-triplet annihilation process known as Dexter electron exchange.
Project Details
Start Date
2014-01-17
End Date
2014-09-30
Status
Closed
Released Data Link
Team
Principal Investigator
Related Publications
Roder PB, S Manandhar, A Devaraj, DE Perea, EJ Davis, and PJ Pauzauskie. 2016. "Pulsed Photothermal Heating of One-Dimensional Nanostructures." Journal of Physical Chemistry C 120(38):21730-21739. doi:10.1021/acs.jpcc.6b04592